VAST SEMI's 3rd generation SiC MOSFETs are available in three series with voltage ratings of 650V, 1200V, and 1700V. VAST SEMI's advanced SiC process substantially enhances RonA and Ron*Qgd, which represent the on-resistance and gate charge-related switching characteristics, respectively. These 3rd generation SiC MOSFETs offer lower power consumption and support a variety of high power density applications such as switching power supplies (data center servers, communication equipment, etc.), photovoltaic inverters, and electric vehicle charging stations.